FQP9N50C - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQP9N50C
Manufacturer

Fairchild
ChipWorker Part#

CW16868525
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

Trans MOSFET N-CH 500V 9A 3Pin(3+Tab) TO-220AB Rail
Documentation

Datasheet

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FQP9N50C Specifications

Attribute	Attribute Value

Part Number	FQP9N50C
Manufacturer	Fairchild
ChipWorker Part#	CW16868525
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	500 V
Current Rating	9.00 A
Drain to Source Resistance (on) (Rds)	800 mΩ
Polarity	N-Channel
Power Dissipation	135 W
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	9.00 A
Rise Time	65 ns
Input Capacitance (Ciss)	1030pF @25V(Vds)
Input Power (Max)	135 W
Fall Time	64 ns
Power Dissipation (Max)	135W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
• 9 A, 500V, RDS(on)= 0.8 Ω@VGS= 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 24 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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