FQPF12N60C - Fairchild
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoFQPF12N60C
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ManufacturerFairchild
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ChipWorker Part#CW53683121
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CategoryMOSFET, MOSFET Transistor
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PackageTO-220-3
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DescriptionTrans MOSFET N-CH 600V 12A 3Pin(3+Tab) TO-220F Rail
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DocumentationDatasheet
Payment Methods and Delivery
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FQPF12N60C Global Supplier
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FQPF12N60C Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | FQPF12N60C |
| Manufacturer | Fairchild |
| ChipWorker Part# | CW53683121 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Voltage Rating (DC) | 600 V |
| Current Rating | 12.0 A |
| Power Rating | 51 W |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 650 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 51 W |
| Input Capacitance | 1.90 nF |
| Gate Charge | 54.0 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 5.80 A |
| Rise Time | 85 ns |
| Input Capacitance (Ciss) | 2290pF @25V(Vds) |
| Input Power (Max) | 51 W |
| Fall Time | 90 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 51W (Tc) |
| expand all | |
| Size-Length | 10.67 mm |
| Size-Width | 4.7 mm |
| Size-Height | 15.87 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| ECCN Code | EAR99 |
| HK STC License | NLR |
Product Description
- Description
- These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devicesare well suited for high
- efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
- Features
- • 12A, 600V, RDS(on)= 0.65Ω@VGS= 10 V
- • Low gate charge ( typical 48 nC)
- • Low Crss ( typical 21pF)
- •Fast switching
- • 100% avalanche tested
- • Improved dv/dt capability
- • RoHS compliant
Delivery
Chipworker Certification
Ordering Information
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These terms and conditions are for reference only. The actual terms and conditions are subject to the sales staff's quotation.
- Please check the technical specifications of the products when ordering.
- MOQ is the minimum order quantity required to purchase each part.
- If you have special ordering instructions, please indicate them on the order page.
- Pre-Shipment Inspection (PSI) will be used when ordering.
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- Orders cannot be canceled after the package has been shipped. View more > -
- Works with both individual and corporate clients. View more >
- All prices on the website include 20% VAT.
- Invoices are issued in the currency specified, but payment is made in Russian rubles at the exchange rate on the day of payment.
- If you need a detailed invoice or a tax identifier, please contact us. -
- Delivery will take between 1 to 2 weeks after the shipment is sent to your country.
- Your order will be processed only after the invoice has been paid.
- The tracking number will be sent to you after the order is shipped. (It may take up to 24 hours for the information to be available from the carrier.) View more > - - Carefully tested and packaged by ChipWorker- Vacuum packed - Anti-static packaging - Anti-vibration foam
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- Income quality control (IQC), 800+ qualified distributors.
- Authorities test the chip to ensure the quality, authenticity and safety of your device.
- Decapsulation control
- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing
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