FQPF8N80C - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQPF8N80C
Manufacturer

Fairchild
ChipWorker Part#

CW10015938
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

FAIRCHILD SEMICONDUCTOR FQPF8N80C Power MOSFET, N Channel, 8A, 800V, 1.29Ω, 10V, 5V
Documentation

Datasheet

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FQPF8N80C Specifications

Attribute	Attribute Value

Part Number	FQPF8N80C
Manufacturer	Fairchild
ChipWorker Part#	CW10015938
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	800 V
Current Rating	8.00 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.29 Ω
Polarity	N-Channel
Power Dissipation	59 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	800 V
Breakdown Voltage (Drain to Source)	800 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	8.00 A
Rise Time	110 ns
Input Capacitance (Ciss)	2050pF @25V(Vds)
Input Power (Max)	59 W
Fall Time	70 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	59W (Tc)
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Size-Length	10.16 mm
Size-Width	4.7 mm
Size-Height	9.19 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99
HK STC License	NLR

Product Description

The FQPF8N80C is a 800V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.
Low gate charge
100% Avalanche tested
Improved system reliability in PFC and soft switching topologies
Switching loss improvements
Lower conduction loss

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