FQT4N20LTF - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQT4N20LTF
Manufacturer

Fairchild
ChipWorker Part#

CW19017268
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

Trans MOSFET N-CH 200V 0.85A 4Pin(3+Tab) SOT-223 T/R
Documentation

Datasheet

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FQT4N20LTF Specifications

Attribute	Attribute Value

Part Number	FQT4N20LTF
Manufacturer	Fairchild
ChipWorker Part#	CW19017268
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-261-4
Voltage Rating (DC)	200 V
Current Rating	850 mA
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.1 Ω
Polarity	N-Channel
Power Dissipation	2.2 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	850 mA
Rise Time	70 ns
Input Capacitance (Ciss)	310pF @25V(Vds)
Input Power (Max)	2.2 W
Fall Time	40 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.2 W
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Size-Length	6.5 mm
Size-Width	3.56 mm
Size-Height	1.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FQT4N20LTF is a N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
Low level gate drive requirements allowing direct operation from logic drives
100% Avalanche tested
4nC Typical low gate charge
6pF Typical low Crss

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