FQT5P10TF - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQT5P10TF
Manufacturer

ON Semiconductor
ChipWorker Part#

CW2361015
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

Trans MOSFET P-CH 100V 1A 4Pin(3+Tab) SOT-223 T/R
Documentation

Datasheet

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FQT5P10TF Specifications

Attribute	Attribute Value

Part Number	FQT5P10TF
Manufacturer	ON Semiconductor
ChipWorker Part#	CW2361015
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	820 mΩ
Power Dissipation	2 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Rise Time	70 ns
Input Capacitance (Ciss)	190pF @25V(Vds)
Input Power (Max)	2 W
Fall Time	30 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	6.5 mm
Size-Width	3.56 mm
Size-Height	1.6 mm
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

Product Description

The FQT5P10TF is a -100V P-channel QFET® MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
Low gate charge (typical 6.3nC)
Low Crss (typical 18pF)
100% Avalanche tested
±30V Gate to source voltage
62.5°C/W Thermal resistance, junction to ambient

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