FQT7N10TF - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQT7N10TF
Manufacturer

ON Semiconductor
ChipWorker Part#

CW41173458
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

MOSFET N-CH 100V 1.7A SOT-223
Documentation

Datasheet

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FQT7N10TF Specifications

Attribute	Attribute Value

Part Number	FQT7N10TF
Manufacturer	ON Semiconductor
ChipWorker Part#	CW41173458
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.28 Ω
Power Dissipation	2 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Rise Time	24 ns
Input Capacitance (Ciss)	250pF @25V(Vds)
Input Power (Max)	2 W
Fall Time	19 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2W (Tc)
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.7 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status

Product Description

The FQT7N10TF is a N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
100% Avalanche tested
5.8nC Typical low gate charge
10pF Typical low Crss

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