FQU17P06TU - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQU17P06TU
Manufacturer

Fairchild
ChipWorker Part#

CW15070382
Category

MOSFET, MOSFET Transistor
Package

TO-251-3
Description

Trans MOSFET P-CH 60V 12A 3Pin(3+Tab) IPAK Tube
Documentation

Datasheet

FQU17P06TU Global Supplier

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FQU17P06TU Specifications

Attribute	Attribute Value

Part Number	FQU17P06TU
Manufacturer	Fairchild
ChipWorker Part#	CW15070382
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-251-3
Supply Voltage (DC)	37.0V (max)
Voltage Rating (DC)	-60.0 V
Current Rating	-12.0 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	135 mΩ
Polarity	P-Channel
Power Dissipation	44 W
Input Capacitance	690 pF
Gate Charge	21.0 nC
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Breakdown Voltage (Gate to Source)	±25.0 V
Continuous Drain Current (Ids)	-12.0 A
Rise Time	100 ns
Input Capacitance (Ciss)	900pF @25V(Vds)
Input Power (Max)	2.5 W
Fall Time	60 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2500 mW
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Size-Length	6.8 mm
Size-Width	2.5 mm
Size-Height	6.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FQU17P06 is a P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength.
Low gate charge
100% Avalanche tested
Low crss (typical 80pF)
±25V Gate-source voltage

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