FS35R12W1T4 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FS35R12W1T4
Manufacturer

Infineon
ChipWorker Part#

CW114736630
Category

IGBT Transistor, IGBT Module
Package

AG-EASY1B-1
Description

IGBT Array & Module Transistor, N Channel, 35A, 1.85V, 225W, 1.2kV, Module
Documentation

Datasheet

FS35R12W1T4 Global Supplier

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FS35R12W1T4 Specifications

Attribute	Attribute Value

Part Number	FS35R12W1T4
Manufacturer	Infineon
ChipWorker Part#	CW114736630
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	18 Pin
Case/Package	AG-EASY1B-1
Polarity	N-Channel
Power Dissipation	225 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Capacitance (Cies)	2nF @25V
Input Power (Max)	225 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	225 W
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Size-Length	62.8 mm
Size-Width	33.8 mm
Size-Height	12 mm
Operating Temperature	-40℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance	No SVHC

Product Description

Summary of Features:
Low Switching Losses
Trench IGBT 3
V(CEsat) with positive Temperature Coefficient
Low V(CEsat)
Al(2)O(3) Substrate with Low Thermal Restistance
Compact Design
Solder Contact Technology
Rugged mounting due to integrated mounting clamps
Benefits:
Compact module concept
Optimized customer’s development cycle time and cost
Configuration flexibility

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