GT20J321 - Toshiba

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

GT20J321
Manufacturer

Toshiba
ChipWorker Part#

CW322487762
Category

IGBT Transistor, IGBT Module
RoHS

Lead free / RoHS Compliant
Description

Trans IGBT Chip N-CH 600V 20A 3Pin(3+Tab) TO-220NIS
Documentation

Datasheet

GT20J321 Global Supplier

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GT20J321 Specifications

Attribute	Attribute Value

Part Number	GT20J321
Manufacturer	Toshiba
ChipWorker Part#	CW322487762
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Number of Pins	3 Pin
Case/Package	TO-220
Polarity	N-Channel
Power Dissipation	45 W
Rise Time	40 ns
Operating Temperature (Max)	150 ℃
Junction Temperature (Max)	150 ℃
	expand all
Product Lifecycle Status	Active
RoHS	RoHS Compliant

Product Description

High Power Switching Applications
Fast Switching Applications
• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.04 μs (typ.)
Low switching loss : Eon = 0.40 mJ (typ.)
: Eoff = 0.43 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector

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