GT50J325 - Toshiba

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

GT50J325
Manufacturer

Toshiba
ChipWorker Part#

CW53472604
Category

IGBT Transistor, IGBT Module
Package

TO-3
Description

IGBT Single Transistor, 50A, 2.45V, 240W, 600V, TO-3P, 3Pins
Documentation

Datasheet

GT50J325 Global Supplier

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GT50J325 Specifications

Attribute	Attribute Value

Part Number	GT50J325
Manufacturer	Toshiba
ChipWorker Part#	CW53472604
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	240 W
Rise Time	70 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Junction Temperature (Max)	150 ℃
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Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Not Recommended
RoHS	RoHS Compliant

Product Description

The GT50J325 from Toshiba is a N channel silicon insulated gate bipolar transistor in through hole TO-3P package. IGBT typically used at fast switching and high power switching applications.
Fourth generation IGBT
Enhancement mode type
Fast switching
Operating frequency up to 50KHz
Maximum collector emitter saturation voltage of 2.45V
FRD included between emitter and collector
Collector emitter voltage VCES of 600V
DC collector current of 50A
Junction temperature of 150°C
Collector power dissipation of 240W

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