GT60M303 - Toshiba

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

GT60M303
Manufacturer

Toshiba
ChipWorker Part#

CW322508000
Category

IGBT Transistor, IGBT Module
Package

TO3P(LH)
Description

Trans IGBT Chip N-CH 900V 60A 3Pin(3+Tab) TO-3P(LH)
Documentation

Datasheet

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GT60M303 Specifications

Attribute	Attribute Value

Part Number	GT60M303
Manufacturer	Toshiba
ChipWorker Part#	CW322508000
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO3P(LH)
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Product Lifecycle Status	Not Recommended
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

HIGH POWER SWITCHING APPLICATIONS
Fourth generation IGBT
FRD included between emitter and collector
Enhancement mode type
High speed IGBT: tf= 0.25μs (TYP.)
FRD : trr= 0.7μs (TYP.)
Low saturation voltage : VCE (sat)= 2.1V (TYP.)

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