HD1750FX - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

HD1750FX
Manufacturer

ST Microelectronics
ChipWorker Part#

CW17999935
Category

BJT Transistor, BJT
Package

ISOWATT-218FX
Description

ISOWATT218FX NPN 800V 24A
Documentation

Datasheet

HD1750FX Global Supplier

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HD1750FX Specifications

Attribute	Attribute Value

Part Number	HD1750FX
Manufacturer	ST Microelectronics
ChipWorker Part#	CW17999935
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	ISOWATT-218FX
Voltage Rating (DC)	800 V
Current Rating	24.0 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	75 W
Breakdown Voltage (Collector to Emitter)	800 V
Continuous Collector Current	24A
Input Power (Max)	75 W
DC Current Gain (hFE)	6
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	75 W
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Size-Length	15.7 mm
Size-Width	5.7 mm
Size-Height	26.7 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The HD1750FX is a 800V High Voltage NPN Power Transistor for high definition and new super-slim CRT displays. It is manufactured using diffused collector in planar technology adopting Enhance High Voltage Structure (EHVS1) developed to fit high-definition CRT displays. The new HD product series show improved silicon efficiency bringing updated performance to the horizontal deflection stage. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
State-of-the-art technology - Diffused collector enhanced generation ehvs1
Wider range of optimum drive conditions
Less sensitive to operating temperature variation
Fully insulated
Well-controlled hFE parameter for increased reliability

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