HD3SS6126RUAR - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

HD3SS6126RUAR
Manufacturer

TI
ChipWorker Part#

CW1503246
Category

USB Chip, USB Interface IC
Package

WQFN-42
Description

USB Interface, Differential 2:1/1:2 Mux/Demux, USB 2.0, 3.0, 3V, 3.6V, WQFN, 42Pins
Documentation

Datasheet

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HD3SS6126RUAR Specifications

Attribute	Attribute Value

Part Number	HD3SS6126RUAR
Manufacturer	TI
ChipWorker Part#	CW1503246
Category	USB Chip, USB Interface IC
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	42 Pin
Case/Package	WQFN-42
Supply Voltage (DC)	3.00V (min)
Supply Current	3 mA
Number of Channels	1 Channel
Number of Positions	42 Position
Data Rate	10.0 Gbps
Bandwidth	10 GHz
Operating Temperature (Max)	70 ℃
Operating Temperature (Min)	0 ℃
3dB Bandwidth	10 GHz
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	3 V
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Operating Temperature	0℃ ~ 70℃ (TA)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The HD3SS6126RUAR is an USB 3.0 2:1/1:2 MUX/DEMUX Differential Passive Switch designed for USB applications to route both SuperSpeed USB RX and TX and USB 2.0 DP and DM signals from a source to two destinations or vice versa. The device can also be used for DisplayPort, PCI-Express, SATA, SAS and XAUI applications. The device can be powered by VBUS from the USB Host and is capable of selecting USB2 independently from USB3. The device also supports common interfaces such as PCIe Gen1 and Gen2, DP and SATA/SAS applications. The device is able to support these additional interfaces because of its support of data rates up to 5.4Gbps and common-mode voltages from 0 to 2V with a maximum signal swing of 1.8V. All of these applications use an 8b or 10b coding technique to achieve DC balance and facilitate terminal equipment. It can be used in either sink-side or source-side applications.
Uses unique adaptation method to maintain constant channel impedance
Excellent high-bandwidth path dynamic characteristics at 2.5GHz
-35dB Crosstalk
-23dB Isolation
-1.1dB Insertion loss
-11dB Return loss
8mW Active mode power
Green product and no Sb/Br
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
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- Electrical testing
- Surface testing

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