HFA3101BZ - Intersil

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

HFA3101BZ
Manufacturer

Intersil
ChipWorker Part#

CW29167852
Category

BJT Transistor, BJT
Package

SOIC-8
Description

Trans GP BJT NPN 8V 0.03A 8Pin SOIC N
Documentation

Datasheet

HFA3101BZ Global Supplier

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HFA3101BZ Specifications

Attribute	Attribute Value

Part Number	HFA3101BZ
Manufacturer	Intersil
ChipWorker Part#	CW29167852
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Frequency	0Hz ~ 10GHz
Voltage Rating (DC)	8.00 V
Current Rating	30.0 mA
Number of Channels	1 Channel
Number of Positions	8 Position
Polarity	NPN
hFE Min	40 @10mA, 3V
hFE Max	40 @10mA, 3V
DC Current Gain (hFE)	70
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The HFA3101BZ is a NPN Gilbert cell UHF Bipolar Transistor Array configured as a multiplier cell. It achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics that have been maximized through careful attention to circuit design and layout, making this product ideal for communication circuits. It is suitable for use in mixer applications and the cell provides high gain and good cancellation of 2nd order distortion terms.
3.5dB Low noise figure (transistor)
<0.01nA Low collector leakage current
Excellent hFE and VBE matching
Pin to pin compatible to UPA101
-40 to 85°C Temperature range

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
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- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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