HGTG18N120BND - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

HGTG18N120BND
Manufacturer

Fairchild
ChipWorker Part#

CW11362400
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1200V 54A 390000mW 3Pin(3+Tab) TO-247 Rail
Documentation

Datasheet

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HGTG18N120BND Specifications

Attribute	Attribute Value

Part Number	HGTG18N120BND
Manufacturer	Fairchild
ChipWorker Part#	CW11362400
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	1.20 kV
Current Rating	54.0 A
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	390 W
Rise Time	22.0 ns
Breakdown Voltage (Collector to Emitter)	1200 V
Reverse recovery time	75 ns
Input Power (Max)	390 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	390 W
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Size-Length	15.87 mm
Size-Width	4.82 mm
Size-Height	20.82 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The HGTG18N120BND is a 1200V N-channel IGBT with anti-parallel hyper fast diode. It is in a non-punch through (NPT) IGBT design. This NPT series is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
140ns at TJ = 150°C Fall time
ESD sensitive device, take proper precaution while handling the device.

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