HGTG30N60B3 - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

HGTG30N60B3
Manufacturer

Fairchild
ChipWorker Part#

CW60256359
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 60A 208000mW 3Pin(3+Tab) TO-247 Rail
Documentation

Datasheet

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HGTG30N60B3 Specifications

Attribute	Attribute Value

Part Number	HGTG30N60B3
Manufacturer	Fairchild
ChipWorker Part#	CW60256359
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	600 V
Current Rating	60.0 A
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	208 W
Breakdown Voltage (Collector to Emitter)	600 V
Input Power (Max)	208 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	208 W
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Size-Length	15.87 mm
Size-Width	4.82 mm
Size-Height	20.82 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The HGTG30N60B3 is a PT IGBT combines the best features of high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. It is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and power supplies.
Short-circuit rating
1.45V @ IC = 30A Low saturation voltage
90ns Fall time @ TJ = 150°C
208W Total power dissipation @ TC = 25°C

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