HGTG30N60B3D - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

HGTG30N60B3D
Manufacturer

Fairchild
ChipWorker Part#

CW11305896
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 60A 208000mW 3Pin(3+Tab) TO-247 Rail
Documentation

Datasheet

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HGTG30N60B3D Specifications

Attribute	Attribute Value

Part Number	HGTG30N60B3D
Manufacturer	Fairchild
ChipWorker Part#	CW11305896
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	600 V
Current Rating	60.0 A
Power Rating	208 W
Number of Positions	3 Position
Power Dissipation	208 W
Rise Time	25.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	55 ns
Input Power (Max)	208 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	208000 mW
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Size-Height	20.82 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The HGTG30N60B3D is a 600V N-channel IGBT with anti-parallel hyper fast diode. The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25° C and 150° C. The diode used in anti-parallel with the IGBT is the RHRP3060. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
90ns at TJ = 150°C Fall time
ESD sensitive device, take proper precaution while handling the device.

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