HGTG40N60B3 - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

HGTG40N60B3
Manufacturer

Fairchild
ChipWorker Part#

CW44319378
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 70A 290000mW 3Pin(3+Tab) TO-247 Rail
Documentation

Datasheet

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HGTG40N60B3 Specifications

Attribute	Attribute Value

Part Number	HGTG40N60B3
Manufacturer	Fairchild
ChipWorker Part#	CW44319378
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	600 V
Current Rating	70.0 A
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	290 W
Breakdown Voltage (Collector to Emitter)	600 V
Input Power (Max)	290 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	290000 mW
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Size-Length	15.87 mm
Size-Width	4.82 mm
Size-Height	20.82 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The HGTG40N60B3 is a N-channel PT IGBT ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as drivers for solenoids, relays and contactors. The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. The much lower ON-state voltage drop varies only moderately between 25 and 150°C.
Short-circuit rating
100ns Fall time @ TJ = 150°C
290W Total power dissipation @ TC = 25°C

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