HIP2101IBZ - Intersil

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

HIP2101IBZ
Manufacturer

Intersil
ChipWorker Part#

CW50498733
Category

FET Driver
Package

SOIC-8
Description

Intersil HIP2101IBZ, Dual MOSFET Power Driver 2A Half Bridge, 9 → 14V, Non-Inverting, 8Pin SOIC
Documentation

Datasheet

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HIP2101IBZ Specifications

Attribute	Attribute Value

Part Number	HIP2101IBZ
Manufacturer	Intersil
ChipWorker Part#	CW50498733
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	9.00V (min)
Rise/Fall Time	10 ns
Number of Outputs	2 Output
Output Current	2.00 A
Number of Positions	8 Position
Power Dissipation	1.3 W
Rise Time	600 ns
Fall Time	600 ns
Fall Time (Max)	600 ns
Fall Time (Max)	600 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1300 mW
Supply Voltage	9V ~ 14V
Supply Voltage (Max)	14 V
Supply Voltage (Min)	9 V
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The HIP2101IBZ is a high frequency N-channel power MOSFET Half-Bridge Driver IC equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate drivers are independently controlled and matched to 13ns. This gives users total control over dead-time for specific power circuit topologies. Under-voltage protection on both the low-side and high-side supplies forces the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary under-voltage of the high-side supply.
Drives N-channel MOSFET half bridge
Bootstrap supply maximum voltage to 114VDC
On-chip 1R bootstrap diode
Fast propagation times for multi-MHz circuits
TTL/CMOS input thresholds increase flexibility
Independent inputs for non-half bridge topologies
No start-up problems
Outputs unaffected by supply glitches, HS ringing below ground or HS slewing at high dv/dt
Low power consumption
Wide supply range
Supply under-voltage protection

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