HMC1114LP5DE - ADI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

HMC1114LP5DE
Manufacturer

ADI
ChipWorker Part#

CW54048866
Category

Amplifier chip
Package

LFCSP-32
Description

RF Amp Single Power Amp 3.8GHz 35V 32Pin LFCSP EP T/R
Documentation

Datasheet

HMC1114LP5DE Global Supplier

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HMC1114LP5DE Specifications

Attribute	Attribute Value

Part Number	HMC1114LP5DE
Manufacturer	ADI
ChipWorker Part#	CW54048866
Category	Amplifier chip
Documentation	Datasheet
Number of Pins	32 Pin
Case/Package	LFCSP-32
Frequency	2.7GHz ~ 3.8GHz
Supply Current	150 mA
Power Dissipation	10 W
Gain	35 dB
Test Frequency	2.7 GHz
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	24000 mW
Supply Voltage	28 V
	expand all
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Product Details
The HMC1114 is a gallium nitride (GaN), broadband power amplifier, delivering 10 W with more than 50% power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.8 GHz. The HMC1114 provides ±0.5 dB gain flatness.
The HMC1114 is ideal for pulsed or continuous wave (CW) applications such as wireless infrastructure, radar, public mobile radio, and general-purpose amplification.
The HMC1114 is housed in a compact LFCSP_CAV package.
**Applications**
Extended battery operation for public mobile radios
Power amplifier stage for wireless infrastructure
Test and measurement equipment
Commercial and military radars
General-purpose transmitter amplification
### Features and Benefits
High saturated output power (PSAT): 41.5 dBm typical
High small signal gain: 35 dB typical
High power gain for saturated output power: 25.5 dB typical
Bandwidth: 2.7 GHz to 3.8 GHz
High power added efficiency (PAE): 54% typical
High output IP3: 44 dBm typical
Supply voltage: VDD = 28 V at 150 mA
32-lead, 5 mm × 5 mm LFCSP_CAV package

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