HMC1131LC4 - ADI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

HMC1131LC4
Manufacturer

ADI
ChipWorker Part#

CW4719896
Category

Amplifier chip
Package

QFN-24
Description

RF Amp Chip Single GP 35GHz 5.5V 24Pin CLLCC T/R
Documentation

Datasheet

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HMC1131LC4 Specifications

Attribute	Attribute Value

Part Number	HMC1131LC4
Manufacturer	ADI
ChipWorker Part#	CW4719896
Category	Amplifier chip
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	24 Pin
Case/Package	QFN-24
Frequency	24GHz ~ 35GHz
Number of Channels	1 Channel
Power Dissipation	1.97 W
Gain	24 dB
Test Frequency	27GHz ~ 35GHz
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1970 mW
	expand all
Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	3A001B2D

Product Description

Product Details
The HMC1131 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), driver amplifier that operates from 24 GHz to 35 GHz. The HMC1131 provides 22 dB of gain at the 24 GHz to 27 GHz range, 35 dBm output IP3, and 24 dBm of output power at 1 dB gain compression, while requiring 225 mA from a 5 V supply. The HMC1131 is capable of supplying 25 dBm of saturated output power and is housed in a compact, 4 mm × 4 mm ceramic leadless chip carrier (24-lead LCC). The HMC1131 is an ideal driver amplifier for a wide range of applications, including point-to-point radios, from 24 GHz to 35 GHz.
**Applications**
Point-to-point radios
Point-to-multipoint radios
VSAT and SATCOM
### Features and Benefits
High saturated output power (PSAT): 25 dBm
High output third-order intercept (IP3): 35 dBm
High gain: 22 dB (24 GHz to 27 GHz)
High output power for 1 dB compression (P1dB): 24 dBm
DC supply: 5 V at 225 mA
Compact 24-lead, 4 mm ×
4 mm LCC package

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