HMC1132LP5DE - ADI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

HMC1132LP5DE
Manufacturer

ADI
ChipWorker Part#

CW50973635
Category

Amplifier chip
Package

LFCSP EP
Description

RF Amp Single Power Amp 32GHz 6V 32Pin LFCSP EP T/R
Documentation

Datasheet

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HMC1132LP5DE Specifications

Attribute	Attribute Value

Part Number	HMC1132LP5DE
Manufacturer	ADI
ChipWorker Part#	CW50973635
Category	Amplifier chip
Documentation	Datasheet
Number of Pins	32 Pin
Case/Package	LFCSP EP
Power Dissipation	5490 mW
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	5490 mW
	expand all
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead

Product Description

Product Details
The HMC1132 is a four-stage, GaAs pHEMT MMIC, 1 watt power amplifier that operates between 27 GHz and 32 GHz. The HMC1132 provides 22 dB of gain and 30.5 dBm of saturated output power at 22% PAE from a 6 V power supply.
The HMC1132 exhibits excellent linearity and it is optimized for high capacity, point-to-point and point-to-multipoint radio systems. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification before the antenna.
The HMC1132 amplifier input/outputs (I/Os) are internally matched to 50 Ω. The device is supplied in a compact, leadless QFN, 5 mm × 5 mm surface-mount package.
**Applications**
Point-to-point radios
Point-to-multipoint radios
VSAT and SATCOM
Military and space
### Features and Benefits
Saturated output power (PSAT): 30.5 dBm at 22% power added efficiency (PAE)
High output IP3: 35 dBm
High gain: 22 dB
DC supply: 6 V at 600 mA
No external matching required
32-lead, 5 mm × 5 mm LFCSP package

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- Surface testing

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