HMC349AMS8GE - ADI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

HMC349AMS8GE
Manufacturer

ADI
ChipWorker Part#

CW2527796
Category

RF Module
Package

MSOP-8
Description

RF Switch SPDT 0MHz to 4000MHz 42dB 8Pin MSOP Bulk
Documentation

Datasheet

HMC349AMS8GE Global Supplier

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HMC349AMS8GE Specifications

Attribute	Attribute Value

Part Number	HMC349AMS8GE
Manufacturer	ADI
ChipWorker Part#	CW2527796
Category	RF Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	MSOP-8
Frequency	4000 MHz
Supply Current	1.2 mA
Number of Positions	8 Position
Power Dissipation	969 mW
Test Frequency	3 GHz
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	969 mW
Supply Voltage	5 V
Supply Voltage (Max)	5 V
Supply Voltage (Min)	3 V
	expand all
Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

Product Details
The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-morphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.
The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm.
The HMC349AMS8G operates with a single positive supply voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible control interface.
The HMC349AMS8G comes in an 8-lead mini small outline package with an exposed pad.
Applications
Cellular/4G infrastructure
Wireless infrastructure
Mobile radios
Test equipment
### Features and Benefits
Nonreflective, 50 Ω design
High isolation: 57 dB to 2 GHz
Low insertion loss: 0.9 dB to 2 GHz
High input linearity
1 dB power compression (P1dB): 34 dBm typical
Third-order intercept (IP3): 52 dBm typical
High power handling
33.5 dBm through path
26.5 dBm terminated path
Single positive supply: 3 V to 5 V
CMOS-/TTL-compatible control
All off state control
8-lead mini small outline package with exposed pad (MINI_SO_EP)

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