HMC562 - ADI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

HMC562
Manufacturer

ADI
ChipWorker Part#

CW69517778
Category

Amplifier chip
Package

DIE
Description

RF Amp Chip Single GP 35GHz 10V 4Pin Die Tray
Documentation

Datasheet

HMC562 Global Supplier

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HMC562 Specifications

Attribute	Attribute Value

Part Number	HMC562
Manufacturer	ADI
ChipWorker Part#	CW69517778
Category	Amplifier chip
Documentation	Datasheet
Number of Pins	4 Pin
Case/Package	DIE
Frequency	2GHz ~ 35GHz
Number of Channels	1 Channel
Power Dissipation	2.3 W
Gain	12.5 dB
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2300 mW
	expand all
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead

Product Description

Product Details
The HMC562 is a GaAs MMIC PHEMT Distributed Driver Amplifier die which operates between 2 and 35 GHz. The amplifier provides 12.5 dB of gain, +27 dBm output IP3 and +12 dBm of output power at 1 dB gain compression while requiring 80 mA from a +8V supply. The HMC562 is ideal for EW, ECM and radar driver amplifier applications. The HMC562 amplifier I/O’s are DC blocked and internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.075mm (3 mil) ribbon bonds of minimal length 0.31mm (12 mils).
Applications
Military & Space
Test Instrumentation
Fiber Optics
### Features and Benefits
P1dB Output Power: +12 dBm
Gain: 12.5 dB
Output IP3: +19 dBm
Supply Voltage: +8V @ 80 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.42 x 0.1 mm

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
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- Decapsulation control
- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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