HMC637A - ADI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

HMC637A
Manufacturer

ADI
ChipWorker Part#

CW39367577
Category

Amplifier chip
Package

SMD
Description

RF Amp Single Power Amp 1GHz 14V 8Pin Die Tray
Documentation

Datasheet

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HMC637A Specifications

Attribute	Attribute Value

Part Number	HMC637A
Manufacturer	ADI
ChipWorker Part#	CW39367577
Category	Amplifier chip
Documentation	Datasheet
Number of Pins	8 Pin
Case/Package	SMD
Frequency	0Hz ~ 6GHz
Supply Current	400 mA
Power Dissipation	5600 mW
Gain	13 dB
Supply Voltage	5 V
	expand all
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Product Details
The HMC637A is a GaAs MMIC MESFET Distributed Power Amplifier die which operates between DC and 6 GHz. The amplifier provides 14 dB of gain, +41 dBm output IP3 and +30.5 dBm of output power at 1 dB gain compression while requiring 400mA from a +12V supply. Gain flatness is excellent at ±0.5 dB from DC to 6 GHz making the HMC637A ideal for EW, ECM, Radar and test equipment applications.
The HMC637A amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-ChipModules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
**Applications**
Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Fiber Optics
### Features and Benefits
P1dB Output Power: +30.5 dBm
Gain: 14 dB
Output IP3: +41 dBm
Bias Supplies: +12V, +6V, -1V
50 Ohm Matched Input/Output
Die Size: 2.98 x 2.48 x 0.1 mm

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
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- Decapsulation control
- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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