IDB30E120 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IDB30E120
Manufacturer

Infineon
ChipWorker Part#

CW99882756
Category

Schottky Diode
Package

TO-263-3
Description

INFINEON IDB30E120 Standard Power Diode, Single, 1.2kV, 50A, 2.15V, 243ns, 102A
Documentation

Datasheet

IDB30E120 Global Supplier

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IDB30E120 Specifications

Attribute	Attribute Value

Part Number	IDB30E120
Manufacturer	Infineon
ChipWorker Part#	CW99882756
Category	Schottky Diode
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Forward Voltage	1.7 V
Power Dissipation	138 W
Reverse recovery time	243 ns
Forward Current	50 A
Max Forward Surge Current (Ifsm)	102 A
Maximum Forward Voltage (Max)	2.15 V
Forward Current (Max)	50 A
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	138 W
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Size-Length	11.05 mm
Size-Width	10.31 mm
Size-Height	4.57 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IDB30E120 is a Fast-switching EmCon Diode offers low conduction losses and an excellent EMI behaviour. The 1200V family displays excellent softness and VF behaviour and is qualified with a Tj maximum of 150°C.
Lowest VF values
Easy paralleling
Fast-recovery
Soft-switching
Low-reverse recovery charge
Low-forward voltage
Higher-efficiency
Excellent trade-off on performance

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Ordering Information

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
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- X-ray inspection
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- Electrical testing
- Surface testing

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