IDD10SG60C - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IDD10SG60C
Manufacturer

Infineon
ChipWorker Part#

CW14809721
Category

TVS Diode
Package

TO-252-3
Description

INFINEON IDD10SG60C Silicon Carbide Schottky Diode, thinQ 3G 600V Series, Single, 600V, 10A, 16NC, TO-252
Documentation

Datasheet

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IDD10SG60C Specifications

Attribute	Attribute Value

Part Number	IDD10SG60C
Manufacturer	Infineon
ChipWorker Part#	CW14809721
Category	TVS Diode
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	120 W
Load Current	10 A
Forward Voltage	2.1 V
Reverse recovery time	0 ns
Forward Current	10 A
Maximum Forward Voltage (Max)	2.1V @10A
Forward Current (Max)	10000 mA
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Junction Temperature (Max)	175 ℃
Power Dissipation (Max)	120000 mW
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.26 mm
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IDD10SG60C is a thinQ!™3rd generation 600V SiC Schottky Diode features the industry"s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. It is third generation Infineon Sic diode. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level so called diffusion soldering. It offers benchmark switching behaviour, no reverse recovery/no forward recovery and high surge current capability. It is used in motor drives, solar applications, UPS, SMPS (CCM, PFC), server, telecom, lightning, PC power, AC-DC applications.
Revolutionary semiconductor material-silicon carbide
Temperature independent switching behaviour
Pb-free lead plating
Qualified according to JEDEC for target applications
Breakdown voltage tested at 20mA
Optimized for high temperature operation
Lowest Figure of Merit QC/IF
System efficiency improvement compared to Si diodes
Reduced cooling requirements
Enabling higher frequency/increased power density
Higher system reliability due to lower operating temperature
Reduced EMI
High operating temperature (Tj max 175°C)

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