IDH10G65C5 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IDH10G65C5
Manufacturer

Infineon
ChipWorker Part#

CW12836110
Category

TVS Diode
Package

TO-220-2
Description

Silicon Carbide Schottky Diode, thinQ 5G 650V Series, Single, 650V, 10A, 15NC, TO-220
Documentation

Datasheet

IDH10G65C5 Global Supplier

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IDH10G65C5 Specifications

Attribute	Attribute Value

Part Number	IDH10G65C5
Manufacturer	Infineon
ChipWorker Part#	CW12836110
Category	TVS Diode
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-220-2
Forward Voltage	1.7V @10A
Power Dissipation	89 W
Reverse recovery time	0 ns
Forward Current	10 A
Max Forward Surge Current (Ifsm)	82 A
Maximum Forward Voltage (Max)	2.1 V
Forward Current (Max)	10 A
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Junction Temperature (Max)	175 ℃
Power Dissipation (Max)	89000 mW
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Size-Length	10.2 mm
Size-Width	4.5 mm
Size-Height	15.95 mm
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IDH10G65C5 is a thinQ!™ 5th generation 650V SiC Schottky Diode represents Infineon leading edge technology. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families, ensures meeting the most stringent application requirements in this voltage range. It offers benchmark switching behaviour, no reverse recovery/no forward recovery and high surge current capability. It is used in switch mode power supply, power factor correction, solar inverter, uninterruptible power supply, server, telecom, LED/LCD TV, motor drives, PC power and HID lightning.
Revolutionary semiconductor material-silicon carbide
Temperature independent switching behaviour
Pb-free lead plating
Qualified according to JEDEC for target applications
Breakdown voltage tested at 22mA
Optimized for high temperature operation
Lowest Figure of Merit QC/IF
System efficiency improvement compared to Si diodes
System cost/size savings due to reduced cooling requirements
Enabling higher frequency/increased power density
Higher system reliability due to lower operating temperature
Reduced EMI
High operating temperature (Tj max 175°C)
Improved surge capability
Higher safety margin against overvoltage and complements CoolMOS™ offer
Improved efficiency over all load conditions
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
Very high quality and high volume manufacturing capability

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