IDW20G65C5 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IDW20G65C5
Manufacturer

Infineon
ChipWorker Part#

CW60128696
Category

TVS Diode
Package

TO-247-3
Description

INFINEON IDW20G65C5 Silicon Carbide Schottky Diode, SIC, thinQ 5G 650V Series, Single, 650V, 20A, 29NC, TO-247
Documentation

Datasheet

IDW20G65C5 Global Supplier

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IDW20G65C5 Specifications

Attribute	Attribute Value

Part Number	IDW20G65C5
Manufacturer	Infineon
ChipWorker Part#	CW60128696
Category	TVS Diode
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Forward Voltage	1.7V @20A
Power Dissipation	112 W
Thermal Resistance	1.3℃/W (RθJC)
Reverse recovery time	0 ns
Forward Current	20 A
Maximum Forward Voltage (Max)	1.7V @20A
Forward Current (Max)	20 A
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Junction Temperature (Max)	175 ℃
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Size-Length	16.13 mm
Size-Width	5.21 mm
Size-Height	21.1 mm
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IDW20G65C5 is a SiC Schottky Diode features higher safety margin against overvoltage and complements CoolMOS™ offer, reduced EMI compared to snappier Silicon diode reverse recovery waveform. The 5th generation thinQ!™ compact Schottky diode with thin-wafer technology and it is improves efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ generation 5 has been designed to complement 650V CoolMOS™ families, this ensures meeting the most stringent application requirements in this voltage range.
Revolutionary semiconductor material-silicon carbide
Reduced cooling requirements
No reverse recovery/no forward recovery
Temperature independent switching behaviour
High surge current capability
Increased efficiency compared to silicon diode alternatives
Enabling higher frequency/increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Reduced risks of thermal runaway

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