IDW40E65D2 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IDW40E65D2
Manufacturer

Infineon
ChipWorker Part#

CW83479366
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

INFINEON IDW40E65D2 Standard Power Diode, Single, 650V, 40A, 1.6V, 36ns, 250A
Documentation

Datasheet

IDW40E65D2 Global Supplier

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IDW40E65D2 Specifications

Attribute	Attribute Value

Part Number	IDW40E65D2
Manufacturer	Infineon
ChipWorker Part#	CW83479366
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Number of Pins	3 Pin
Case/Package	TO-247-3
Reverse recovery time	36 ns
Forward Current	40 A
Max Forward Surge Current (Ifsm)	250 A
Maximum Forward Voltage (Max)	1.6 V
Forward Current (Max)	80000 mA
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	180000 mW
	expand all
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IDW40E65D2 is a rapid-switching Emitter Controlled Diode designed for applications switching between 40 and 100kHz by offering low reverse recovery charge (Qrr) and time (trr) to minimize the reverse conduction times attributed to the power switch turn-on losses and thus providing maximum efficiency. It is used for boost diode in CCM PFC.
Lowest Irrm to provide lowest turn-on losses on the boost switch
Fast-recovery
Soft-switching
Low forward voltage and stable over-temperature
Low forward voltage and stable over-temperature
Easy paralleling

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