IGB50N60T - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IGB50N60T
Manufacturer

Infineon
ChipWorker Part#

CW13335119
Category

IGBT Transistor, IGBT Module
Package

TO-263-3
Description

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3Pin
Documentation

Datasheet

IGB50N60T Global Supplier

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IGB50N60T Specifications

Attribute	Attribute Value

Part Number	IGB50N60T
Manufacturer	Infineon
ChipWorker Part#	CW13335119
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	333 W
Breakdown Voltage (Collector to Emitter)	600 V
Input Power (Max)	333 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	333000 mW
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Size-Length	10.25 mm
Size-Width	9.9 mm
Size-Height	4.4 mm
Operating Temperature	-40℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Summary of Features:
Lowest V ce(sat) drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
Very soft, fast recovery anti-parallel Emitter Controlled Diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution
Benefits:
Highest efficiency – low conduction and switching losses
Comprehensive portfolio in 600V and 1200V for flexibility of design
High device reliability

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