IGCM06F60GAXKMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IGCM06F60GAXKMA1
Manufacturer

Infineon
ChipWorker Part#

CW24769103
Category

IGBT Transistor, IGBT Module
Package

MDIP-24
Description

14V to 18.5V 24Pin MDIP Tube
Documentation

Datasheet

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IGCM06F60GAXKMA1 Specifications

Attribute	Attribute Value

Part Number	IGCM06F60GAXKMA1
Manufacturer	Infineon
ChipWorker Part#	CW24769103
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	24 Pin
Case/Package	MDIP-24
Number of Outputs	6 Output
Output Voltage	600 V
Output Current	6 A
Number of Positions	24 Position
Power Dissipation	23.6 W
Isolation Voltage	2000 Vrms
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	23.6 W
Supply Voltage (Max)	18.5 V
Supply Voltage (Min)	13.5 V
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Operating Temperature	-40℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The IGCM06F60GAXKMA1 from Infineon is a Control Integrated POwer System (CIPOS) mini transfer moulded intelligent power module. This dual in-line intelligent power module (3Φ -bridge 600V/6A) achieves cost efficiency and it is designed specifically for home appliance and low power industrial application. The CIPOS module family offers the chance for integrating various power and control components to increase reliability, optimize PCB size and system costs. It is designed to control three phase AC motors and permanent magnet motors in variable speed drives for applications like an air conditioning, refrigerator and washing machine. The package concept is specially adapted to power applications which need good thermal conduction and electrical isolation but also EMI save control and overload protection. TRENCHSTOP IGBTs and anti parallel diodes are combined with an optimized SOI gate driver for excellent electrical performance.
IGCM06F60GA, SP001247004
1mA collector emitter leakage current at VCE = 600V and 600V repetitive peak reverse voltage
Based on reverse conducting IGBT technology, integrated bootstrap circuit, UL1577 certificated
Allowable negative VS potential up to -11V for signal transmission at VBS=15V
Rugged 3-phase SOI gate driver technology with stability against transient and negative voltage
Low side emitter pins accessible for all phase, current monitoring (open emitter)
3 phase open emitter configuration, Pmot of 800W at 10KHz and rated current of 6A
400V DC link supply voltage of P-N and 13.5V to 18.5V high side floating supply voltage (VB vs. VS)
Undervoltage lockout, overcurrent protection, cross conduction prevention
14V to 18.5V low side supply voltage, ±1V/µs control supply variation, built-in NTC
1.6V collector emitter saturation voltage and 1.75V emitter collector forward voltage at TJ = 25°C

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