IGCM10F60GAXKMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IGCM10F60GAXKMA1
Manufacturer

Infineon
ChipWorker Part#

CW29467233
Category

IGBT Transistor, IGBT Module
Package

PowerDIP-24
Description

Trans IGBT Module N-CH 24Pin MDIP
Documentation

Datasheet

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IGCM10F60GAXKMA1 Specifications

Attribute	Attribute Value

Part Number	IGCM10F60GAXKMA1
Manufacturer	Infineon
ChipWorker Part#	CW29467233
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Number of Pins	24 Pin
Case/Package	PowerDIP-24
Number of Outputs	6 Output
Output Voltage	600 V
Output Current	10 A
Number of Positions	24 Position
Isolation Voltage	2000 Vrms
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage (Max)	18.5 V
Supply Voltage (Min)	13.5 V
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Size-Length	36 mm
Size-Width	21 mm
Size-Height	5.1 mm
Operating Temperature	-40℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

* Infineon reverse conducting IGBTs with monolithic body diode * Rugged SOI gate driver technology with stability against transient and negative voltage * Allowable negative VS potential up to -11V for signal transmission at VBS=15V * Integrated bootstrap functionality * Over current shutdown * Temperature monitor  Under-voltage lockout at all channels * Low side emitter pins accessible for all phase current monitoring (open emitter) * Cross-conduction prevention * All of 6 switches turn off during protection * Lead-free terminal plating; RoHS compliant

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