IGP50N60T - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IGP50N60T
Manufacturer

Infineon
ChipWorker Part#

CW13522944
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 90A 333000mW 3Pin(3+Tab) TO-220AB Tube
Documentation

Datasheet

IGP50N60T Global Supplier

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IGP50N60T Specifications

Attribute	Attribute Value

Part Number	IGP50N60T
Manufacturer	Infineon
ChipWorker Part#	CW13522944
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	333 W
Number of Positions	3 Position
Power Dissipation	333 W
Breakdown Voltage (Collector to Emitter)	600 V
Input Power (Max)	333 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	333 W
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Size-Length	10.36 mm
Size-Width	4.57 mm
Size-Height	15.95 mm
Operating Temperature	-40℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IGP50N60T is a 600V Discrete IGBT Single Transistor without anti-parallel diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Lowest Vce (sat) drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
Very soft, fast recovery anti-parallel emitter controlled diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution
Comprehensive portfolio in 600V and 1200V for flexibility of design
High device reliability
±20V Gate to emitter voltage (VGE)
0.45K/W IGBT thermal resistance, junction to case
40K/W IGBT thermal resistance, junction - ambient

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