IGW25N120H3 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IGW25N120H3
Manufacturer

Infineon
ChipWorker Part#

CW16948611
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

INFINEON IGW25N120H3 IGBT Single Transistor, 50A, 2.05V, 326W, 1.2kV, TO-247, 3Pins
Documentation

Datasheet

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IGW25N120H3 Specifications

Attribute	Attribute Value

Part Number	IGW25N120H3
Manufacturer	Infineon
ChipWorker Part#	CW16948611
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	326 W
Number of Positions	3 Position
Power Dissipation	326 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	326 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	326 W
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Size-Length	16.13 mm
Size-Width	5.21 mm
Size-Height	21.1 mm
Operating Temperature	-40℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Description:
Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.
Summary of Features:
Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
Low switching losses for high efficiency
Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
Fast switching behavior with low EMI emissions
Optimized diode for target applications, meaning further improvement in switching losses
Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
Short circuit capability
Offering T j(max) of 175°C
Packaged with and without freewheeling diode for increased design freedom
Benefits:
Excellent cost/performance
Low switching and conduction losses
Very good EMI behavior
A small gate resistor for reduced delay time and voltage overshoot
Smaller die sizes -> smaller packages
Best-in-class IGBT efficiency and EMI behavior

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