IGW25T120 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IGW25T120
Manufacturer

Infineon
ChipWorker Part#

CW10149729
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1200V 50A 190000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

IGW25T120 Global Supplier

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IGW25T120 Specifications

Attribute	Attribute Value

Part Number	IGW25T120
Manufacturer	Infineon
ChipWorker Part#	CW10149729
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	190 W
Number of Positions	3 Position
Power Dissipation	190 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	190 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	190 W
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Size-Length	16.13 mm
Size-Width	5.21 mm
Size-Height	21.1 mm
Operating Temperature	-40℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

Summary of Features:
Lowest V ce(sat) drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution
Benefits:
Highest efficiency – low conduction and switching losses
Comprehensive portfolio in 600V and 1200V for flexibility of design
High device reliability

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