IKP20N60T - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IKP20N60T
Manufacturer

Infineon
ChipWorker Part#

CW15259804
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 40A 166000mW 3Pin(3+Tab) TO-220AB Tube
Documentation

Datasheet

IKP20N60T Global Supplier

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IKP20N60T Specifications

Attribute	Attribute Value

Part Number	IKP20N60T
Manufacturer	Infineon
ChipWorker Part#	CW15259804
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	166 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	166 W
Rise Time	14 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	41 ns
Input Power (Max)	166 W
Fall Time	42 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
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Size-Length	10 mm
Size-Width	4.4 mm
Size-Height	9.25 mm
Operating Temperature	-40℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IKP20N60T is a 600V Discrete IGBT with very soft, fast recovery anti-parallel emitter controlled diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
Lowest Vce (sat) drop for lower conduction losses
Low switching losses
Easy to parallel switching capability due to positive temperature coefficient in Vce (sat)
High ruggedness, temperature stable behaviour
Low EMI emissions
Low gate charge
Very tight parameter distribution
Highest efficiency
Low conduction and switching losses

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