IKQ75N120CH3 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IKQ75N120CH3
Manufacturer

Infineon
ChipWorker Part#

CW22338529
Package

TO-247-3
Description

Transistor: IGBT; 1200V; 75A; 256W; TO247-3; Series: H3
Documentation

Datasheet

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IKQ75N120CH3 Specifications

Attribute	Attribute Value

Part Number	IKQ75N120CH3
Manufacturer	Infineon
ChipWorker Part#	CW22338529
Documentation	Datasheet
Case/Package	TO-247-3
Power Rating	938 W
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Operating Temperature	-40℃ ~ 175℃
Product Lifecycle Status	Active
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Description:
Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode.
Summary of Features:
High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
20% lower R th(jh) compared to TO-247 3 pin
Extended collector-emitter pin creepage of 4.25 mm
Extended clip creepage due to fully encapsulated front side of the package
Benefits:
Higher system power density – I c increase keeping the same system thermal performance
Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247
Higher reliability, extended lifetime of the device

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