IKW30N60H3 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IKW30N60H3
Manufacturer

Infineon
ChipWorker Part#

CW4813740
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 60A 187000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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IKW30N60H3 Specifications

Attribute	Attribute Value

Part Number	IKW30N60H3
Manufacturer	Infineon
ChipWorker Part#	CW4813740
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	187 W
Number of Positions	3 Position
Power Dissipation	187 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	38 ns
Input Power (Max)	187 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	187 W
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Size-Length	15.87 mm
Size-Width	5.31 mm
Size-Height	20.7 mm
Operating Temperature	-40℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IKW30N60H3 is a 600V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
Low switching losses for high efficiency
Fast switching behaviour with low EMI emissions
Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
Short circuit capability
Excellent performance
Low switching and conduction losses

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