IKW30N60T - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IKW30N60T
Manufacturer

Infineon
ChipWorker Part#

CW3754104
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 45A 187000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

IKW30N60T Global Supplier

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IKW30N60T Specifications

Attribute	Attribute Value

Part Number	IKW30N60T
Manufacturer	Infineon
ChipWorker Part#	CW3754104
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	187 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	187 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	143 ns
Input Power (Max)	187 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	187 W
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Size-Length	16.13 mm
Size-Width	5.3 mm
Size-Height	21.1 mm
Operating Temperature	-40℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IKW30N60T is a 600V Discrete IGBT with very soft, fast recovery anti-parallel emitter controlled diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
Lowest Vce (sat) drop for lower conduction losses
Low switching losses
Easy to parallel switching capability due to positive temperature coefficient in Vce (sat)
High ruggedness, temperature stable behaviour
Low EMI emissions
Low gate charge
Very tight parameter distribution
Highest efficiency
Low conduction and switching losses

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