IKW40N120H3 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IKW40N120H3
Manufacturer

Infineon
ChipWorker Part#

CW829765
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

INFINEON IKW40N120H3 IGBT Single Transistor, 40A, 2.4V, 483W, 1.2kV, TO-247, 3Pins
Documentation

Datasheet

IKW40N120H3 Global Supplier

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IKW40N120H3 Specifications

Attribute	Attribute Value

Part Number	IKW40N120H3
Manufacturer	Infineon
ChipWorker Part#	CW829765
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	483 W
Number of Positions	3 Position
Power Dissipation	483 W
Breakdown Voltage (Collector to Emitter)	1200 V
Reverse recovery time	355 ns
Input Power (Max)	483 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	483 W
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Size-Length	16.03 mm
Size-Width	5.16 mm
Size-Height	21.1 mm
Operating Temperature	-40℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IKW40N120H3 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
Low switching losses for high efficiency
Fast switching behaviour with low EMI emissions
Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
Short circuit capability
Excellent performance
Low switching and conduction losses

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