IMD2AT108 - ROHM Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IMD2AT108
Manufacturer

ROHM Semiconductor
ChipWorker Part#

CW2318393
Category

BJT Transistor, BJT
Package

SC-74-6
Description

SMT NPN+PNP 50V 100mA
Documentation

Datasheet

IMD2AT108 Global Supplier

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IMD2AT108 Specifications

Attribute	Attribute Value

Part Number	IMD2AT108
Manufacturer	ROHM Semiconductor
ChipWorker Part#	CW2318393
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-74-6
Voltage Rating (DC)	50.0 V
Current Rating	30.0 mA
Power Rating	0.3 W
Polarity	N-Channel, P-Channel
Power Dissipation	300 mW
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	100mA
hFE Min	56 @5mA, 5V
Input Power (Max)	300 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Gain Bandwidth	250 MHz
Power Dissipation (Max)	300 mW
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Size-Length	3 mm
Size-Width	1.8 mm
Size-Height	1.2 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Features
1) Both the DTA124E chip and DTC124E chip in a EMT or UMT or SMT package.
2) Mounting possible with EMT6 or UMT6 or SMT6 automatic mounting machines.
3) Transistor elements are independent, eliminating interference.
4) Mounting cost and area can be cut in half.
Structure
Epitaxial planar type
NPN / PNP silicon transistor (Built-in resistor type)

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
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- Authorities test the chip to ensure the quality, authenticity and safety of your device.
- Decapsulation control
- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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