INA197AIDBVT - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

INA197AIDBVT
Manufacturer

TI
ChipWorker Part#

CW2569900
Category

Operational Amplifier, OP Amp IC
Package

SOT-23-5
Description

TEXAS INSTRUMENTS INA197AIDBVT Current Sense Amplifier, Common-Mode Range, 1 Amplifier, 16µA, SOT-23, 5Pins, -55℃, 150℃
Documentation

Datasheet

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INA197AIDBVT Specifications

Attribute	Attribute Value

Part Number	INA197AIDBVT
Manufacturer	TI
ChipWorker Part#	CW2569900
Category	Operational Amplifier, OP Amp IC
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	5 Pin
Case/Package	SOT-23-5
Supply Voltage (DC)	2.70V (min)
Supply Current	700 µA
Number of Circuits	1 Circuit
Number of Channels	1 Channel
Number of Positions	5 Position
Common Mode Rejection Ratio	94 dB
Bandwidth	300 kHz
Slew Rate	1.00 V/μs
Input Offset Voltage	2 mV
Input Bias Current	16 µA
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Gain Bandwidth	80 dB
Accuracy	±3 %
Minimum CMRR Range	80 dB
Supply Voltage	2.7V ~ 18V
Supply Voltage (Max)	18 V
Supply Voltage (Min)	2.7 V
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Size-Length	2.9 mm
Size-Width	1.6 mm
Size-Height	1.15 mm
Operating Temperature	-40℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The INA197AIDBVT is a low/high-side high-speed voltage output Current-shunt Monitor with voltage output can sense drops across shunts at common-mode voltages from -16 to +80V, independent of the INA19x supply voltage. This monitor is available with 50V/V output voltage scale. The 500kHz bandwidth simplifies use in current control loops.
3% Maximum over-temperature low error
Complete current-sense solution
900µA Maximum quiescent current
Green product and no Sb/Br
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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