IPA80R280P7XKSA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPA80R280P7XKSA1
Manufacturer

Infineon
ChipWorker Part#

CW68466464
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

Trans MOSFET N-CH 800V 17A 3Pin(3+Tab) TO-220FP Tube
Documentation

Datasheet

IPA80R280P7XKSA1 Global Supplier

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IPA80R280P7XKSA1 Specifications

Attribute	Attribute Value

Part Number	IPA80R280P7XKSA1
Manufacturer	Infineon
ChipWorker Part#	CW68466464
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.24 Ω
Power Dissipation	30 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	800 V
Rise Time	6 ns
Input Capacitance (Ciss)	1200pF @500V(Vds)
Fall Time	5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	30W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Rail, Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Description:
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.
This new product family offers up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products.
Overall, it helps customers save BOM cost and reduce assembly effort.
Summary of Features:
Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss
Best-in-class DPAK R DS(on) of 280mΩ
Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio
Benefits:
0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3
Enabling higher power density designs, BOM savings and lower assembly cost
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Easy to select right parts for fine tuning of designs
Target Applications:
Adapter
LED
Audio
Industrial SMPS
AUX power

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Ordering Information

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