IPB010N06N - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPB010N06N
Manufacturer

Infineon
ChipWorker Part#

CW6674104
Category

MOSFET, MOSFET Transistor
Package

TO-263-7
Description

D2PAK N-CH 60V 180A
Documentation

Datasheet

IPB010N06N Global Supplier

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IPB010N06N Specifications

Attribute	Attribute Value

Part Number	IPB010N06N
Manufacturer	Infineon
ChipWorker Part#	CW6674104
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	7 Pin
Case/Package	TO-263-7
Number of Positions	7 Position
Drain to Source Resistance (on) (Rds)	0.0008 Ω
Polarity	N-Channel
Power Dissipation	300 W
Threshold Voltage	2.8 V
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	180A
Rise Time	36 ns
Input Capacitance (Ciss)	15000pF @30V(Vds)
Input Power (Max)	300 W
Fall Time	23 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300W (Tc)
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Size-Length	10.31 mm
Size-Width	4.57 mm
Size-Height	9.45 mm
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Summary of Features:
Optimized for synchronous rectification
40% lower R DS(on) than alternative devices
40% improvement of FOM over similar devices
RoHS compliant - halogen free
MSL1 rated
Benefits:
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot

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