IPB017N10N5ATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPB017N10N5ATMA1
Manufacturer

Infineon
ChipWorker Part#

CW12066862
Category

MOSFET, MOSFET Transistor
Package

TO-263-7
Description

D2PAK N-CH 100V 180A
Documentation

Datasheet

IPB017N10N5ATMA1 Global Supplier

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IPB017N10N5ATMA1 Specifications

Attribute	Attribute Value

Part Number	IPB017N10N5ATMA1
Manufacturer	Infineon
ChipWorker Part#	CW12066862
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	TO-263-7
Power Rating	375 W
Number of Channels	1 Channel
Number of Positions	7 Position
Drain to Source Resistance (on) (Rds)	0.0015 Ω
Polarity	N-CH
Power Dissipation	375 W
Threshold Voltage	2.2 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	180A
Rise Time	23 ns
Input Capacitance (Ciss)	15600pF @50V(Vds)
Input Power (Max)	375 W
Fall Time	27 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	375W (Tc)
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Size-Width	9.25 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status
ECCN Code	EAR99

Product Description

Summary of Features:
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 43% from previous generation
Benefits:
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Target Applications:
Telecom
Server
Solar
Low voltage drives
Light electric vehicles
Adapter

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