IPB017N10N5LFATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPB017N10N5LFATMA1
Manufacturer

Infineon
ChipWorker Part#

CW58459890
Package

TO-263-7
Description

Trans MOSFET N-CH 100V 180A 7Pin(6+Tab) D2PAK T/R
Documentation

Datasheet

IPB017N10N5LFATMA1 Global Supplier

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IPB017N10N5LFATMA1 Specifications

Attribute	Attribute Value

Part Number	IPB017N10N5LFATMA1
Manufacturer	Infineon
ChipWorker Part#	CW58459890
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	7 Pin
Case/Package	TO-263-7
Number of Positions	7 Position
Drain to Source Resistance (on) (Rds)	0.0015 Ω
Power Dissipation	313 W
Threshold Voltage	3.3 V
Drain to Source Voltage (Vds)	100 V
Rise Time	28 ns
Input Capacitance (Ciss)	650pF @50V(Vds)
Fall Time	82 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	313000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Description:
OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.�
Summary of Features:
Combination of low R DS(on) and wide safe operating area (SOA)
High max. pulse current
High continuous pulse current�
Benefits:
Rugged linear mode operation
Low conduction losses�
Higher in-rush current enabled for faster start-up and shorter down time

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