IPB019N06L3 G - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPB019N06L3 G
Manufacturer

Infineon
ChipWorker Part#

CW61600996
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

MOSFET Transistor, N Channel, 120A, 60V, 0.0016Ω, 10V, 1.7V
Documentation

Datasheet

IPB019N06L3 G Global Supplier

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IPB019N06L3 G Specifications

Attribute	Attribute Value

Part Number	IPB019N06L3 G
Manufacturer	Infineon
ChipWorker Part#	CW61600996
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0016 Ω
Polarity	N-Channel
Power Dissipation	250 W
Threshold Voltage	1.7 V
Drain to Source Voltage (Vds)	60 V
Rise Time	79 ns
Input Capacitance (Ciss)	28000pF @30V(Vds)
Fall Time	38 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	250W (Tc)
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Size-Length	10 mm
Size-Width	9.25 mm
Size-Height	4.4 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Summary of Features:
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Ideal for fast switching applications
RoHS compliant - halogen free
MSL1 rated
Benefits:
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot

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