IPB019N08N3GATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPB019N08N3GATMA1
Manufacturer

Infineon
ChipWorker Part#

CW21526553
Category

MOSFET, MOSFET Transistor
Package

TO-263-7
Description

D2PAK N-CH 80V 180A
Documentation

Datasheet

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IPB019N08N3GATMA1 Specifications

Attribute	Attribute Value

Part Number	IPB019N08N3GATMA1
Manufacturer	Infineon
ChipWorker Part#	CW21526553
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	7 Pin
Case/Package	TO-263-7
Number of Channels	1 Channel
Number of Positions	7 Position
Drain to Source Resistance (on) (Rds)	0.0016 Ω
Polarity	N-Channel
Power Dissipation	300 W
Threshold Voltage	2.8 V
Input Capacitance	10700 pF
Drain to Source Voltage (Vds)	80 V
Breakdown Voltage (Drain to Source)	80 V
Continuous Drain Current (Ids)	180A
Rise Time	73 ns
Input Capacitance (Ciss)	10700pF @40V(Vds)
Fall Time	33 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300000 mW
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Size-Length	10 mm
Size-Width	9.25 mm
Size-Height	4.4 mm
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IPB019N08N3 G is an OptiMOS™ 3 N-channel Power Transistor with superior thermal resistance, excellent gate charge x R DS (ON) product (FOM) and dual-sided cooling. Optimized technology for DC/DC converters.
Excellent gate charge
Very low on resistance
100% Avalanche tested
Low parasitic inductance
Halogen-free

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