IPB025N10N3 G - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPB025N10N3 G
Manufacturer

Infineon
ChipWorker Part#

CW39501840
Category

MOSFET, MOSFET Transistor
Package

TO-263-7
Description

MOSFET N-CH 100V 180A TO263-7
Documentation

Datasheet

IPB025N10N3 G Global Supplier

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IPB025N10N3 G Specifications

Attribute	Attribute Value

Part Number	IPB025N10N3 G
Manufacturer	Infineon
ChipWorker Part#	CW39501840
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	7 Pin
Case/Package	TO-263-7
Number of Positions	7 Position
Drain to Source Resistance (on) (Rds)	0.002 Ω
Polarity	N-Channel
Power Dissipation	300 W
Threshold Voltage	2.7 V
Drain to Source Voltage (Vds)	100 V
Rise Time	58 ns
Input Capacitance (Ciss)	14800pF @50V(Vds)
Input Power (Max)	300 W
Fall Time	28 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300W (Tc)
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Size-Length	10 mm
Size-Width	9.25 mm
Size-Height	4.4 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Summary of Features:
Excellent switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
RoHS compliant-halogen free
MSL1 rated 2
Benefits:
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
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- Anti-vibration foam
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- Electrical testing
- Surface testing

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